to ? 92l 1. emitter 2. collector 3. base to-92l plastic-encapsulate transistors KTC3227 transistor (npn) features z complementary to kta1274 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 1ma,i e =0 80 v collector-emitter breakdown voltage v (br)ceo i c =5ma,i b =0 80 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 5 v collector cut-off current i cbo v cb =50v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =2v, i c =50ma 70 240 dc current gain h fe(2) v ce =2v, i c =200ma 40 collector-emitter saturation voltage v ce(sat) i c =200ma,i b =20ma 0.4 v base-emitter voltage v be v ce =2v,i c =5ma 0.55 0.8 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 10 pf transition frequency f t v ce =10v,i c =10ma 100 mhz classification of h fe(1) rank o y range 70-140 120-240 symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 5 v i c collector current 0.4 a p c collector power dissipation 1 w r ja thermal resistance from junction to ambient 125 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,apr,2013
0.1 1 10 100 200 400 600 800 1000 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1 10 100 10 100 1000 0 200 400 600 800 1000 0.1 1 10 100 012345 0 20 40 60 80 100 120 0.1 1 10 1 10 100 1000 10 20 30 40 50 60 70 80 90 100 10 100 1000 1 10 100 1 10 100 1000 =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 f t ?? i c p c ?? t a ambient temperature t a ( ) collector power dissipation p c (w) KTC3227 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 2v 2.3 400 collector current i c (ma) base-emmiter voltage v be (mv) i c ?? v be t a = 2 5 t a = 1 0 0 common emitter v ce =2v static characteristic common emitter t a =25 collector current i c (ma) collector-emitter voltage v ce (v) capacitance c (pf) reverse voltage v (v) 35 c ob /c ib ?? v cb /v eb f=1mhz i e =0/i c =0 t a =25 c ob c ib common emitter vce=10v t a =25 collector current i c (ma) transition frequency f t (mhz) 0.3 400 400 400 =10 t a = 1 0 0 t a = 2 5 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector current i c (ma) i b =0.07ma 0.70ma 0.63ma 0.56ma 0.49ma 0.42ma 0.35ma 0.28ma 0.21ma 0.14ma 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,apr,2013
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